Datasheet > 2SC5714_06

2SC5714_06

更新时间： 2024-09-23 04:05:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	140K
描述
Silicon NPN Epitaxial Type

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中文翻译

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数据手册

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2SC5714_06 数据手册

2SC5714

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5714

Industrial Applications

Unit: mm

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

•

High DC current gain: h

= 400 to 1000 (I = 0.5 A)

FE C

Low collector-emitter saturation voltage: V

= 0.15 V (max)

CE (sat)

High-speed switching: t = 90 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

Collector-emitter voltage

Emitter-base voltage

CEX

CEO

EBO

Collector current

Base current

Pulse

JEDEC

JEITA

―

400

SC-62

2-5K1A

1.0

Collector power

dissipation

TOSHIBA

(Note 1)

t = 10 s

2.5

Weight: 0.05 g (typ.)

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2006-11-10

12 3 4 5

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