Datasheet > 2SC5547

2SC5547

更新时间： 2025-07-28 04:26:07

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
4页	60K
描述
For High Frequency Amplify Application Silicon NPN Epitaxial Type

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中文翻译

获取价格

数据手册

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2SC5547 数据手册

2^〈S^TrC^ans5^isto5^r〉47

ForꢀHigh Frequency Amplify Application

Silicon NPN Epitaxial Type

DESCRIPTIO N

OUTLINE DRAWING

UNIT:mm

2SC5547 isSC-62(SO T-89)package

resin sealed silicon NPN epitaxialtransistor.

Itisdesigned forhigh frequencyapplication.

4.6 MAX

1.5

1.6

FEATURE

･High gain bandwidth product. fT=4.5G Hz

･High gain,low noise

･Can operate atlow voltage.

0.53

MAX

0.4

･SC-62(SO T-89)package easym ountaing

0.48 MAX

Mark

1.5

3.0

APPLICATIO N

TERMINAL CONNECTOR

ForTV tuners,high frequencyam plifier.

celluarphone system .

Ｅ: EMITTER

Ｃ: COLLECTOR

Ｂ: BASE

JEITA :SC-62

JEDEC :

Marking

M AXIM UM RATING S (Ta=25℃)

Ratings

Param eter

Sym bol

VCBO

VEBO

VCEO

I C

unit

A D

Collectorto Base voltage

Em itterto Base voltage

Collector to Em ittervoltage

℃

Collectorcurrent

Lot No.

Collectordissipation

Janction tem perture

Storage tem perture

400

+150

Tstg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Lim its

typ

Param eter

unit

Sym bol

Testconditions

m in

m ax

C to B break down voltage

C to E break down voltage

Collectorcutoffcurent

Em ittercutoffcurent

V(BR)CBO

V(BR)CEO

I CBO

I CB=10μA, I E=0

I C=1mA, RBE=∞

μA

VCB=15V, I E=0

0.5

I EBO

VEB=3V, I C=0

μA

DC forward currentgain

hFE

Cob

VCE=5V, I C=20mA

VCB=5V, I E=0, f=1MHz

1.0

4.5

9.0

1.5

200

1.5

Collectoroutputcapacitance

G ain bandwidth product

Insertion powergain

Noise figure

GHz

VCE=5V, I E=-20mA

|S21|²

3.5

VCB=5V, I C=20mA, f=1.8GHz

VCE=5V, I C=5mA, f=1.0GHz

ISAHAYAꢀELECTRONICSꢀCORPORATION

12 3 4

中文翻译

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