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2SC5551

更新时间： 2024-02-28 05:08:25
品牌 Logo 应用领域
三洋 - SANYO 晶体放大器晶体管
页数 文件大小 规格书
5页 45K
描述
High-Frequency Medium-Output Amplifier Applications

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2SC5551 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PSSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.7
外壳连接：COLLECTOR最大集电极电流 (IC)：0.3 A
基于收集器的最大容量：4 pF集电极-发射极最大电压：30 V
配置：SINGLEJESD-30 代码：R-PSSO-F3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：SINGLE
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：3500 MHzBase Number Matches：1

2SC5551 数据手册

 浏览型号2SC5551的Datasheet PDF文件第2页浏览型号2SC5551的Datasheet PDF文件第3页浏览型号2SC5551的Datasheet PDF文件第4页浏览型号2SC5551的Datasheet PDF文件第5页 
Ordering number:ENN6328  
NPN Epitaxial Planar Silicon Transistor  
2SC5551  
High-Frequency Medium-Output  
Amplifier Applications  
Features  
Package Dimensions  
unit:mm  
· High f : (f =3.5GHz typ).  
T
T
· Large current : (I =300mA).  
· Large allowable collector dissipation (1.3W max).  
C
2038A  
[2SC5551]  
4.5  
1.6  
1.5  
0.4  
0.5  
3
2
1
0.4  
1.5  
3.0  
1 : Base  
0.75  
2 : Collector  
3 : Emitter  
SANYO : PCP  
(Bottom view)  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
40  
30  
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
V
CEO  
V
2
EBO  
I
300  
600  
1.3  
150  
mA  
mA  
W
C
Collector Current (pulse)  
Collector Dissipation  
I
CP  
Mounted on a ceramic board (250mm2× 0.8mm)  
P
C
Junction Temperature  
Storage Temperature  
Tj  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
Collector Cutoff Current  
I
V
V
V
V
=20V, I =0  
E
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
Emitter Cutoff Current  
DC Current Gain  
I
=1V, I =0  
5.0  
EBO  
C
h
h
1
=5V, I =50mA  
C
=5V, I =300mA  
C
90  
20  
270  
FE  
FE  
2
Continued on next page.  
* : The 2SC5551 is classified by 50mA h as follows :  
FE  
Marking  
Rank  
EB  
E
F
h
90 to 180  
135 to 270  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
21000TS (KOTO) TA-2665 No.6328–1/5  
12345

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与2SC5551相关器件

型号 品牌 获取价格 描述 数据表
2SC5551A SANYO

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 		High-Frequency Medium-Output Amplifier Applications
2SC5551A_12 SANYO

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 		High-Frequency Medium-Output Amplifier Applications
2SC5551AE ONSEMI

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 		TRANSISTOR,BJT,NPN,30V V(BR)CEO,300MA I(C),SOT-89
2SC5551A-E ONSEMI

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 		RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, PCP, 3 PIN
2SC5551AE-TD-E ONSEMI

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 		RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz
2SC5551AF ONSEMI

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 		TRANSISTOR,BJT,NPN,30V V(BR)CEO,300MA I(C),SOT-89
2SC5551A-F ONSEMI

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 		RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, PCP, 3 PIN
2SC5551AF-TD-E SANYO

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 		High-Frequency Medium-Output Amplifier Applications
2SC5551AF-TD-E ONSEMI

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 		RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz
2SC5551E SANYO

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 		TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 300MA I(C) | TO-243

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