5秒后页面跳转
2SC5548A(TE16L1,NQ PDF预览

2SC5548A(TE16L1,NQ

更新时间: 2024-10-01 21:18:59
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
5页 204K
描述
Small Signal Bipolar Transistor

2SC5548A(TE16L1,NQ 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknown风险等级:5.67
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN功耗环境最大值:1 W
最大功率耗散 (Abs):15 W表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):3300 nsVCEsat-Max:1 V
Base Number Matches:1

2SC5548A(TE16L1,NQ 数据手册

 浏览型号2SC5548A(TE16L1,NQ的Datasheet PDF文件第2页浏览型号2SC5548A(TE16L1,NQ的Datasheet PDF文件第3页浏览型号2SC5548A(TE16L1,NQ的Datasheet PDF文件第4页浏览型号2SC5548A(TE16L1,NQ的Datasheet PDF文件第5页 
2SC5548  
TOSHIBA Transistor Silicon NPN Triple Diffused Type  
2SC5548  
High Voltage Switching Applications  
Unit: mm  
Switching Regulator Applications  
DC-DC Converter Applications  
High speed switching: t = 0.5 μs (max), t = 0.3 μs (max) (I = 0.8 A)  
r
f
C
High collector breakdown voltage: V  
= 370 V  
CEO  
High DC current gain: h  
= 60 (min) (I = 0.2 A)  
C
FE  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
600  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
370  
7
DC  
I
2
C
Collector current  
Base current  
A
A
Pulse  
I
4
0.5  
CP  
JEDEC  
JEITA  
I
B
Ta = 25°C  
Tc = 25°C  
1.0  
Collector power  
dissipation  
P
W
C
15  
TOSHIBA  
2-7J1A  
Junction temperature  
T
150  
°C  
°C  
j
Weight: 0.36 g (typ.)  
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2010-02-05  

与2SC5548A(TE16L1,NQ相关器件

型号 品牌 获取价格 描述 数据表
2SC5548A_05 TOSHIBA

获取价格

High Voltage Switching Applications
2SC5549 TOSHIBA

获取价格

NPN TRIPLE DIFFUSED TYPE (HIGH SPEED SWITCHING APPLICATIONS FOR INVERTER LIGHTING SYSTEM)
2SC5549_04 TOSHIBA

获取价格

High-Speed Switching Application for Inverter Lighting
2SC554-C SECOS

获取价格

NPN Plastic Encapsulated Transistor
2SC554U SWST

获取价格

小信号晶体管
2SC555 ETC

获取价格

TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | TO-39
2SC5550 TOSHIBA

获取价格

NPN TRIPLE DIFFUSED TYPE (HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM)
2SC5550_04 TOSHIBA

获取价格

High-Speed Switching Application for Inverter Lighting
2SC5551 SANYO

获取价格

High-Frequency Medium-Output Amplifier Applications
2SC5551A SANYO

获取价格

High-Frequency Medium-Output Amplifier Applications