生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.6 | 最大集电极电流 (IC): | 0.3 A |
配置: | Single | 最小直流电流增益 (hFE): | 90 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 1.3 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5551A-E | ONSEMI |
获取价格 |
RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, PCP, 3 PIN |
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2SC5551AE-TD-E | ONSEMI |
获取价格 |
RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz |
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2SC5551AF | ONSEMI |
获取价格 |
TRANSISTOR,BJT,NPN,30V V(BR)CEO,300MA I(C),SOT-89 |
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2SC5551A-F | ONSEMI |
获取价格 |
RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, PCP, 3 PIN |
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2SC5551AF-TD-E | SANYO |
获取价格 |
High-Frequency Medium-Output Amplifier Applications |
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2SC5551AF-TD-E | ONSEMI |
获取价格 |
RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz |
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2SC5551E | SANYO |
获取价格 |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 300MA I(C) | TO-243 |
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2SC5551F | SANYO |
获取价格 |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 300MA I(C) | TO-243 |
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2SC5552 | PANASONIC |
获取价格 |
Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
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2SC5553 | PANASONIC |
获取价格 |
Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
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