Datasheet > 2SC5548A_05

2SC5548A_05

更新时间： 2024-01-01 05:38:16

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	192K
描述
High Voltage Switching Applications

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中文翻译

获取价格

数据手册

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2SC5548A_05 数据手册

2SC5548A

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5548A

High Voltage Switching Applications

Unit: mm

Switching Regulator Applications

DC-DC Converter Applications

•

High speed switching: t = 0.5 µs (max), t = 0.3 µs (max) (I = 0.8 A)

High collector breakdown voltage: V

= 400 V

CEO

High DC current gain: h

= 40 (min) (I = 0.2 A)

Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

600

Collector-emitter voltage

Emitter-base voltage

400

Collector current

Base current

Pulse

0.5

JEDEC

JEITA

―

Ta = 25°C

Tc = 25°C

1.0

Collector power

dissipation

TOSHIBA

2-7B1A

Junction temperature

150

°C

Weight: 0.36 g (typ.)

Storage temperature range

stg

−55 to 150

JEDEC

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

2005-02-01

12 3 4 5

中文翻译

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