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2SC5551A

更新时间： 2024-02-04 05:49:43
品牌 Logo 应用领域
三洋 - SANYO 晶体放大器晶体管
页数 文件大小 规格书
4页 77K
描述
High-Frequency Medium-Output Amplifier Applications

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中文翻译

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2SC5551A 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.32
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：0.3 A基于收集器的最大容量：4 pF
集电极-发射极最大电压：30 V配置：SINGLE
JESD-30 代码：R-PSSO-F3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：SINGLE
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：3500 MHzBase Number Matches：1

2SC5551A 数据手册

 浏览型号2SC5551A的Datasheet PDF文件第2页浏览型号2SC5551A的Datasheet PDF文件第3页浏览型号2SC5551A的Datasheet PDF文件第4页 
Ordering number : ENA1118  
SANYO Sem iconductors  
DATA S HEET  
NPN Epitaxial Planar Silicon Transistor  
High-Frequency Medium-Output  
Amplifier Applications  
2SC5551A  
Features  
•
High f : (f =3.5GHz typ).  
T
T
•
•
Large current : (I =300mA).  
C
Large allowable collector dissipation (1.3W max).  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
V
40  
30  
CBO  
CEO  
EBO  
V
2
V
I
I
300  
600  
1.3  
150  
mA  
mA  
W
C
Collector Current (Pulse)  
Collector Dissipation  
CP  
P
When mounted on ceramic substrate (250mm2✕0.8mm)  
C
Junction Temperature  
Storage Temperature  
Tj  
°C  
°C  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
Collector Cutoff Current  
Emitter Cutoff Current  
I
I
V
V
=20V, I =0A  
μA  
μA  
CBO  
CB  
E
=1V, I =0A  
5.0  
EBO  
EB  
C
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
www.semiconductor-sanyo.com/network  
D0209AB TK IM TC-00002042  
No. A1118-1/4  
1234

中文翻译

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与2SC5551A相关器件

型号 品牌 获取价格 描述 数据表
2SC5551A_12 SANYO

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 		High-Frequency Medium-Output Amplifier Applications
2SC5551AE ONSEMI

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 		TRANSISTOR,BJT,NPN,30V V(BR)CEO,300MA I(C),SOT-89
2SC5551A-E ONSEMI

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 		RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, PCP, 3 PIN
2SC5551AE-TD-E ONSEMI

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 		RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz
2SC5551AF ONSEMI

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 		TRANSISTOR,BJT,NPN,30V V(BR)CEO,300MA I(C),SOT-89
2SC5551A-F ONSEMI

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 		RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, PCP, 3 PIN
2SC5551AF-TD-E SANYO

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 		High-Frequency Medium-Output Amplifier Applications
2SC5551AF-TD-E ONSEMI

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 		RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz
2SC5551E SANYO

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 		TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 300MA I(C) | TO-243
2SC5551F SANYO

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 		TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 300MA I(C) | TO-243

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