Datasheet > 2SC5549_04

2SC5549_04

更新时间： 2024-02-27 22:01:30

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	145K
描述
High-Speed Switching Application for Inverter Lighting

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中文翻译

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2SC5549_04 数据手册

2SC5549

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5549

High-Speed Switching Application for Inverter Lighting

System

Unit: mm

•

Suitable for RCC circuits. (guaranteed small current h )

: h

= 13 (min) (I = 1 mA)

•

High speed: t = 0.5 µs (max), t = 0.3 µs (max) (I = 0.24 A)

High breakdown voltage: V

= 400 V

CEO

Maximum Ratings

(Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

400

Collector current

Pulse

Base current

0.5

0.9

150

JEDEC

JEITA

TO-92MOD

Collector power dissipation

Junction temperature

°C

SC-65

TOSHIBA

2-5J1A

Storage temperature range

stg

−55 to 150

Weight: 0.36 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 320 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

―

100

―

µA

CBO

Emitter cut-off current

= 7 V, I = 0

EBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

= 1 mA, I = 0

400

(BR) CBO

(BR) CEO

= 10 mA, I = 0

―

= 5 V, I = 1 mA

―

FE (1)

FE (2)

DC current gain

= 5 V, I = 0.04 A

Collector-emitter saturation voltage

Base-emitter saturation voltage

= 0.2 A, I = 25 mA

―

1.0

1.3

CE (sat)

BE (sat)

= 0.2 A, I = 25 mA

―

Rise time

―

0.5

5.0

0.3

≈ 200 V

20 µs

Input

Output

Switching time

µs

Storage time

Fall time

stg

= 0.03 A, I = −0.06 A,

Duty cycle ≤ 1%

2004-07-26

12 3 4 5

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2SC5550_04	TOSHIBA	获取价格	High-Speed Switching Application for Inverter Lighting
2SC5551	SANYO	获取价格	High-Frequency Medium-Output Amplifier Applications
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