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2SC5275-3 PDF预览

2SC5275-3

更新时间: 2024-11-23 23:20:23
品牌 Logo 应用领域
其他 - ETC 晶体晶体管光电二极管放大器
页数 文件大小 规格书
5页 137K
描述
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | TO-236AB

2SC5275-3 数据手册

 浏览型号2SC5275-3的Datasheet PDF文件第2页浏览型号2SC5275-3的Datasheet PDF文件第3页浏览型号2SC5275-3的Datasheet PDF文件第4页浏览型号2SC5275-3的Datasheet PDF文件第5页 
Ordering number:EN5187  
NPN Epitaxial Planar Silicon Transistor  
2SC5277  
UHF to S Band Low-Noise Amplifier,  
OSC Applications  
Features  
Package Dimensions  
unit:mm  
· Low noise : NF=0.9dB typ (f=1GHz).  
: NF=1.4dB typ (f=1.5GHz).  
2106A  
· High gain : S21e 2=10dB typ (f=1.5GHz).  
· High cutoff frequency : f =11GHz typ.  
· Low-voltage, low-current operation  
[2SC5277]  
0.75  
T
0.3  
0.6  
(V =1V, I =1mA)  
CE  
C
: f =7GHz type.  
:
T
0 to 0.1  
S21e 2=5.5dB typ (f=1.5GHz).  
· Ultrasmall-sized package permitting 2SC5277-  
applied sets to be made small and slim.  
0.2  
0.1  
0.5  
0.5  
1.6  
1 : Base  
2 : Emitter  
3 : Collector  
SANYO : SMCP  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Collector-to-Base Voltage  
V
20  
10  
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
V
CEO  
V
1.5  
30  
V
EBO  
I
mA  
mW  
˚C  
˚C  
C
Collector Dissipation  
Junction Temperature  
Storage Temperature  
P
100  
150  
C
Tj  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
Collector Cutoff Current  
I
V
V
V
V
V
V
V
=10V, I =0  
E
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CE  
CB  
CB  
Emitter Cutoff Current  
DC Current Gain  
I
=1V, I =0  
10  
EBO  
C
h
=5V, I =10mA  
C
=5V, I =10mA  
C
=1V, I =1mA  
C
=10V, f=1MHz  
60*  
270*  
FE  
f 1  
T
f 2  
T
8
11  
GHz  
GHz  
pF  
Gain-Bandwidth Product  
7
0.45  
0.30  
Output Capacitance  
Cob  
0.7  
Reverse Transfer Capacitance  
Cre  
=10V, f=1MHz  
pF  
Continued on next page.  
* : The 2SC5277 is classified by 10mA h as follows :  
FE  
Marking  
D1  
D2  
D3  
135 to 270  
h
60 to 120  
90 to 180  
FE  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
21599TH (KT)/83095YK (KOTO) TA-0413 No.5187–1/5  

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