Datasheet > 2SC5275-4

2SC5275-4

更新时间： 2024-11-23 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
5页	137K
描述
TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 30MA I(C) \| TO-236AB

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中文翻译

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数据手册

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2SC5275-4 数据手册

Ordering number:EN5187

NPN Epitaxial Planar Silicon Transistor

2SC5277

UHF to S Band Low-Noise Amplifier,

OSC Applications

Features

Package Dimensions

unit:mm

· Low noise : NF=0.9dB typ (f=1GHz).

: NF=1.4dB typ (f=1.5GHz).

2106A

· High gain : S21e ²=10dB typ (f=1.5GHz).

· High cutoff frequency : f =11GHz typ.

· Low-voltage, low-current operation

[2SC5277]

0.75

0.3

0.6

(V =1V, I =1mA)

: f =7GHz type.

0 to 0.1

S21e ²=5.5dB typ (f=1.5GHz).

· Ultrasmall-sized package permitting 2SC5277-

applied sets to be made small and slim.

0.2

0.1

0.5

1.6

1 : Base

2 : Emitter

3 : Collector

SANYO : SMCP

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

1.5

EBO

˚C

Collector Dissipation

Junction Temperature

Storage Temperature

100

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

1.0

Collector Cutoff Current

=10V, I =0

µA

CBO

Emitter Cutoff Current

DC Current Gain

=1V, I =0

EBO

=5V, I =10mA

=1V, I =1mA

=10V, f=1MHz

60*

270*

f 1

f 2

GHz

Gain-Bandwidth Product

0.45

0.30

Output Capacitance

Cob

0.7

Reverse Transfer Capacitance

Cre

=10V, f=1MHz

Continued on next page.

* : The 2SC5277 is classified by 10mA h as follows :

Marking

135 to 270

60 to 120

90 to 180

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

21599TH (KT)/83095YK (KOTO) TA-0413 No.5187–1/5

12 3 4 5

中文翻译

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与2SC5275-4相关器件

型号	品牌	获取价格	描述	数据表
2SC5275-5	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 30MA I(C) \| TO-236AB
2SC5276	SANYO	获取价格	UHF to S Band Low-Noise Amp, OSC Applications
2SC5277	SANYO	获取价格	UHF to S Band Low-Noise Amp, OSC Applications
2SC5277A	SANYO	获取价格	UHF to S-Band Low-Noise Amplifier OSC Applications
2SC5277A_12	SANYO	获取价格	UHF to S-Band Low-Noise Amplifier OSC Applications
2SC5277A-2-TL-E	ONSEMI	获取价格	射频晶体管，10V，30mA，fT = 8GHz，NPN 单 SMCP
2SC5277D1	ETC	获取价格	BJT
2SC5277D2	ETC	获取价格	BJT
2SC5277D3	ETC	获取价格	BJT
2SC5279	TOSHIBA	获取价格	TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE

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