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2SC5264LS

更新时间： 2024-11-23 22:40:03
品牌 Logo 应用领域
三洋 - SANYO 晶体晶体管局域网
页数 文件大小 规格书
4页 44K
描述
Inverter Lighting Applications

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中文翻译

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2SC5264LS 技术参数

生命周期：Obsolete零件包装代码：TO-220FI
包装说明：TO-220FI(LS), 3 PIN针数：3
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.46其他特性：HIGH RELIABILITY
外壳连接：ISOLATED最大集电极电流 (IC)：5 A
集电极-发射极最大电压：450 V配置：SINGLE
最小直流电流增益 (hFE)：10JESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：NPN
最大功率耗散 (Abs)：30 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管元件材料：SILICONBase Number Matches：1

2SC5264LS 数据手册

 浏览型号2SC5264LS的Datasheet PDF文件第2页浏览型号2SC5264LS的Datasheet PDF文件第3页浏览型号2SC5264LS的Datasheet PDF文件第4页 
Ordering number:ENN5287A  
NPN Triple Diffused Planar Silicon Transistor  
2SC5264LS  
Inverter Lighting Applications  
Features  
Package Dimensions  
unit:mm  
· High breakdown voltage (V  
=1000V).  
CBO  
· High reliability (Adoption of HVP process).  
· Adoption of MBIT process.  
2079D  
[2SC5264]  
10.0  
4.5  
3.2  
2.8  
0.9  
1.2  
1.2  
0.75  
0.7  
1 : Base  
1
2
3
2 : Collector  
3 : Emitter  
2.55  
2.55  
SANYO : TO-220FI (LS)  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
1000  
450  
9
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CEO  
V
V
EBO  
I
5
A
C
Collector Current (Pulse)  
I
10  
2
A
CP  
W
W
˚C  
Collector Dissipation  
P
C
Tc=25˚C  
30  
150  
Junction Temperature  
Storage Temperature  
Tj  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
10  
I
V
V
I
=450V, I =0  
µA  
mA  
V
CBO  
CB  
CE  
E
Collector Cutoff Current  
I
=1000V, R =0  
BE  
=100mA, I =0  
B
1.0  
CES  
Collector-to-Emitter Sustain Voltage  
Emitter Cutoff Current  
V
450  
CEO(sus)  
C
I
V
=9V, I =0  
1.0  
1.0  
1.5  
mA  
V
EBO  
EB  
C
Collector-to-Emitter Saturation Voltage  
V
I
=2.5A, I =0.5A  
CE(sat)  
BE(sat)  
C
B
Base-to-Emitter Saturation Voltage  
V
I
=2.5A, I =0.5A  
B
V
C
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
O3101TS KT/O1899TS (KOTO) TA-1923 No.5287–1/4  
1234

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