Datasheet > 2SC5270A

2SC5270A

更新时间： 2024-11-23 22:40:03

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松下 - PANASONIC		/
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描述
Silicon NPN triple diffusion mesa type(For horizontal deflection output)

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中文翻译

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数据手册

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2SC5270A 数据手册

Power Transistors

2SC5270, 2SC5270A

Silicon NPN triple diffusion mesa type

For horizontal deflection output

Unit: mm

15.5±0.5

3.0±0.3

5°

φ3.2±0.1

Features

■

5°

●

High breakdown voltage, and high reliability through the use of a

glass passivation layer

●

High-speed switching

5°

●

Wide area of safe operation (ASO)

5°

4.0

2.0±0.2

1.1±0.1

Absolute Maximum Ratings (T =25˚C)

■

0.7±0.1

Parameter

Symbol

Ratings

Unit

5.45±0.3

Collector to

2SC5270

2SC5270A

2SC5270

2SC5270A

1500

V_CBO

base voltage

Collector to

base voltage

1600

5°

1500

V_CES

1600

1:Base

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

V_CEO

V_EBO

I_CP

600

2:Collector

3:Emitter

TOP–3E Full Pack Package

I_C

Base current

I_B

Collector power T_C=25°C

120

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

Conditions

min

typ

max

Unit

2SC5270

2SC5270A

2SC5270

2SC5270A

V_CB= 1000V, I_E= 0

µA

Collector cutoff

I_CBO

current

V_CB= 1500V, I_E= 0

V_CB= 1600V, I_E= 0

V_EB= 5V, I_C= 0

Emitter cutoff current

I_EBO

h_FE

µA

Forward current transfer ratio

V_CE= 5V, I_C= 6A

I_C= 6A, I_B= 1.5A

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

1.5

Transition frequency

Storage time

f_T

t_stg

t_f

V_CE= 10V, I_C= 0.1A, f = 0.5MHz

MHz

µs

1.5

0.12

2.5

0.2

I_C= 6A, I_B1= 1.5A, I_B2= –3A

Fall time

µs

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