生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T5 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | COMMON EMITTER, 2 ELEMENTS |
最小直流电流增益 (hFE): | 250 | JESD-30 代码: | R-PSIP-T5 |
元件数量: | 2 | 端子数量: | 5 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 150 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5168G | MITSUBISHI |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | |
2SC5169 | ISAHAYA |
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SMALL-SIGNAL TRANSISTOR | |
2SC5169G | MITSUBISHI |
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Small Signal Bipolar Transistor, 0.05A I(C), 100V V(BR)CEO, 2-Element, NPN, Silicon | |
2SC5169H | MITSUBISHI |
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Small Signal Bipolar Transistor, 0.05A I(C), 100V V(BR)CEO, 2-Element, NPN, Silicon | |
2SC517 | ETC |
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-37 | |
2SC5170G | MITSUBISHI |
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Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 2-Element, NPN, Silicon | |
2SC5171 | TOSHIBA |
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NPN EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS) | |
2SC5171 | CJ |
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Transistor | |
2SC5171 | FOSHAN |
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TO-220F | |
2SC5171_07 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type Power Amplifier Applications |