Datasheet > 2SC5171_07

2SC5171_07

更新时间： 2024-11-18 04:26:07

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
4页	123K
描述
Silicon NPN Epitaxial Type Power Amplifier Applications

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2SC5171_07 数据手册

2SC5171

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5171

Power Amplifier Applications

Unit: mm

Driver Stage Amplifier Applications

•

High transition frequency: f = 200 MHz (typ.)

Complementary to 2SA1930

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

180

Collector-emitter voltage

Emitter-base voltage

Collector current

180

Base current

2.0

Ta = 25°C

Tc = 25°C

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

TOSHIBA

2-10R1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 1.7 g (typ.)

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-10

12 3 4

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2SC5173	TOSHIBA	获取价格	HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS
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2SC5174	TOSHIBA	获取价格	TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
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