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2SC5177 PDF预览

2SC5177

更新时间: 2024-11-17 22:52:43
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管微波光电二极管放大器
页数 文件大小 规格书
12页 59K
描述
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

2SC5177 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.01 A
基于收集器的最大容量:0.6 pF集电极-发射极最大电压:3 V
配置:SINGLE最高频带:C BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):13000 MHz
Base Number Matches:1

2SC5177 数据手册

 浏览型号2SC5177的Datasheet PDF文件第2页浏览型号2SC5177的Datasheet PDF文件第3页浏览型号2SC5177的Datasheet PDF文件第4页浏览型号2SC5177的Datasheet PDF文件第5页浏览型号2SC5177的Datasheet PDF文件第6页浏览型号2SC5177的Datasheet PDF文件第7页 
DATA SHEET  
SILICON TRANSISTOR  
2SC5177  
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE  
FOR LOW-NOISE MICROWAVE AMPLIFICATION  
FEATURES  
Low Current Consumption and High Gain  
|S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz  
|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz  
Mini-Mold package  
PACKAGE DIMENSIONS  
(Units: mm)  
2.8±0.2  
1.5  
0.65+00..115  
EIAJ: SC-59  
ORDERING INFORMATION  
2
1
PART  
QUANTITY  
NUMBER  
ARRANGEMENT  
3
2SC5177-T1  
3 000 units/reel  
Embossed tape, 8 mm wide, pin  
No. 3 (collector) facing the  
perforations  
Marking  
2SC5177-T2  
3 000 units/reel  
Embossed tape, 8 mm wide, pins  
No. 1 (emitter) and No. 2 (base)  
facing the perforations  
Remark Contact your NEC sales representatives to order samples  
for evaluation (available in batches of 50).  
PIN CONNECTIONS  
1. Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
5
V
V
2. Base  
3
3. Collector  
2
V
10  
30  
mA  
mW  
°C  
°C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
Tj  
150  
Tstg  
–65 to +150  
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.  
Document No. P12101EJ2V0DS00 (2nd edition)  
(Previous No. TC-2474)  
Date Published November 1996 N  
Printed in Japan  
1994  
©

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