2SC5174
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5174
Power Amplifier Applications
Unit: mm
Driver Stage Amplifier Applications
•
•
High transition frequency: f = 100 MHz (typ.)
T
Complementary to 2SA1932
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
230
V
V
CBO
CEO
EBO
230
5
V
I
1
0.1
A
C
Base current
I
B
A
Collector power dissipation
Junction temperature
P
1.8
W
°C
°C
C
JEDEC
JEITA
―
―
T
150
j
Storage temperature range
T
stg
−55 to 150
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 230 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
I
V
V
―
―
―
―
1.0
1.0
―
µA
µA
V
CBO
CB
E
= 5 V, I = 0
EBO
EB
C
Collector-emitter breakdown voltage
DC current gain
V
I
C
= 10 mA, I = 0
230
100
―
―
(BR) CEO
B
h
V
CE
= 5 V, I = 100 mA
―
320
1.5
1.0
―
FE
CE (sat)
C
Collector-emitter saturation voltage
Base-emitter voltage
V
I
C
= 500 mA, I = 50 mA
―
V
V
B
V
BE
V
CE
V
CE
V
CB
= 5 V, I = 500 mA
―
―
C
Transition frequency
f
= 10 V, I = 100 mA
―
100
20
MHz
pF
T
C
Collector output capacitance
C
ob
= 10 V, I = 0, f = 1 MHz
―
―
E
Marking
C5174
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26