Datasheet > 2SC5174_04

2SC5174_04

更新时间： 2024-11-20 07:31:07

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
3页	116K
描述
Power Amplifier Applications

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中文翻译

获取价格

数据手册

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2SC5174_04 数据手册

2SC5174

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5174

Power Amplifier Applications

Unit: mm

Driver Stage Amplifier Applications

•

High transition frequency: f = 100 MHz (typ.)

Complementary to 2SA1932

Maximum Ratings

(Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

230

CBO

CEO

EBO

230

0.1

Base current

Collector power dissipation

Junction temperature

1.8

°C

JEDEC

JEITA

―

150

Storage temperature range

stg

−55 to 150

TOSHIBA

2-10T1A

Weight: 1.5 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 230 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

―

1.0

―

µA

CBO

= 5 V, I = 0

EBO

Collector-emitter breakdown voltage

DC current gain

= 10 mA, I = 0

230

100

―

(BR) CEO

= 5 V, I = 100 mA

―

320

1.5

1.0

―

CE (sat)

Collector-emitter saturation voltage

Base-emitter voltage

= 500 mA, I = 50 mA

―

= 5 V, I = 500 mA

―

Transition frequency

= 10 V, I = 100 mA

―

100

MHz

Collector output capacitance

= 10 V, I = 0, f = 1 MHz

―

Marking

C5174

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2004-07-26

12 3

中文翻译

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