Datasheet > 2SC5172_06

2SC5172_06

更新时间： 2024-11-18 04:26:07

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关高压 PC
页数	文件大小	规格书
5页	143K
描述
Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High-Voltage Switching Applications

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2SC5172_06 数据手册

2SC5172

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)

2SC5172

Switching Regulator and High-Voltage Switching

Applications

Unit: mm

High-Speed DC-DC Converter Applications

•

Excellent switching times: t = 0.5 μs (max),

t = 0.3 μs (max) at I = 2 A

High collector breakdown voltage: V

= 400 V

CEO

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

600

Collector-emitter voltage

Emitter-base voltage

400

Collector current

Base current

Pulse

JEDEC

JEITA

―

2.0

SC-67

2-10R1A

Ta = 25°C

Tc = 25°C

Collector power

dissipation

TOSHIBA

Junction temperature

150

°C

Weight: 1.7 g (typ.)

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-10

12 3 4 5

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