Datasheet > 2SC5108FT-O

2SC5108FT-O

更新时间： 2024-11-21 06:50:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
2页	119K
描述
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP RF Small Signal

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中文翻译

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数据手册

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2SC5108FT-O 数据手册

2SC5108FT

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC5108FT

For VCO Application

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Base current

°C

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

100

125

stg

−55 to 125

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

TOSHIBA

2-1B1A

Weight: 2.2mg (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 10 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

⎯

0.1

μA

CBO

= 1 V, I = 0

EBO

DC current gain

= 5 V, I = 5 mA

⎯

240

(Note 1)

Transition frequency

Insertion gain

= 5 V, I = 5 mA

⎯

GHz

⎪S

⎪

= 5 V, I = 5 mA, f = 1 GHz

21e

Output capacitance

⎯

0.7

0.5

5.5

⎯

= 5 V, I = 0, f = 1 MHz

(Note 2)

Reverse transfer capacitance

Collector-base time constant

0.9

C ･r

’

= 5 V, I = 3 mA, f = 30 MHz

Note 1:

Note 2:

classification O: 80 to 160, Y: 120 to 240

is measured by 3 terminal method with capacitance bridge.

Marking

2010-03-18

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