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2SC4755Q PDF预览

2SC4755Q

更新时间: 2024-11-17 19:26:43
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
3页 173K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, NPN, Silicon, SC-70, 3 PIN

2SC4755Q 技术参数

生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.84最大集电极电流 (IC):0.2 A
配置:SINGLE最小直流电流增益 (hFE):60
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):500 MHz
最大关闭时间(toff):15 ns最大开启时间(吨):17 ns
Base Number Matches:1

2SC4755Q 数据手册

 浏览型号2SC4755Q的Datasheet PDF文件第2页浏览型号2SC4755Q的Datasheet PDF文件第3页 
Transistor  
2SC4755  
Silicon NPN epitaxial planer type  
For high speed switching  
Unit: mm  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
High-speed switching.  
Low collector to emitter saturation voltage VCE(sat)  
.
S-Mini type package, allowing downsizing of the equipmenand  
automatic insertion through the tape packing and te magazine  
packing.  
3
2
Absolute Maximum Ratings (Ta=25C)  
Parameter  
Syl  
VS  
VEBO  
ICP  
Ratings  
Uit  
V
0.2±0.1  
Collector to base voltage  
Collector to emitter volta
Emitter to base voltage  
Peak collector cuent  
Collector cuent  
25  
20  
V
5
V
1:Base  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
00  
mA  
mA  
mW  
˚C  
IC  
200  
Collectoower dsipation  
Junion terature  
Storage ature  
PC  
0  
Marking symbol : DV  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteriscs (Ta=25˚)  
eter  
Symbol  
ICBO  
Conditions  
min  
40  
typ  
max  
0.1  
Unit  
µA  
Coent  
Emitter ent  
VCB = 10V, IE = 0  
IEBO  
VEB = 4V, C = 0  
0.1  
µA  
*
Forward cunt transfer ratio  
hFE  
VCE = 1V, IC = 10mA  
200  
0.25  
1.0  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 10mA, IB = 1mA  
0.17  
0.76  
500  
2
V
V
IC = 10mA, IB = 1mA  
Transition frequency  
Collector output capacitance  
Turn-on time  
fT  
VCB = 10V, IE = –10mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
200  
MHz  
pF  
ns  
Cob  
ton  
toff  
tstg  
4
17  
Turn-off time  
Refer to the measurment circuit  
15  
ns  
Storage time  
7
ns  
*hFE Rank classification  
Rank  
hFE  
P
Q
R
40 ~ 80  
DVP  
60 ~ 120  
DVQ  
90 ~ 200  
DVR  
Marking Symbol  
1

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