Datasheet > 2SC4763_2015

2SC4763_2015

更新时间： 2024-11-18 01:18:51

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	111K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SC4763_2015 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2SC4763

DESCRIPTION

·With TO-3P(H)IS package

·High speed

·High voltage

·Low saturation voltage

·Bult-in damper type

APPLICATIONS

·Horizontal deflection output for medium

resolution display

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3P(H)IS) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

1500

600

UNIT

Open base

Open collector

±8

I_CM

Collector current-Peak

Base current

±16

I_B

P_C

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

T_stg

-55~150

JMnic

12 3

中文翻译

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