Datasheet > 2SC4770_2015

2SC4770_2015

更新时间： 2024-12-01 01:18:51

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	56K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC4770_2015 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2SC4770

DESCRIPTION

·With TO-3PML package

·High breakdown voltage, high reliability.

·High speed

APPLICATIONS

·Ultrahigh-definition color display

·Horizontal deflection output applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3PML) and symbol

Maximum absolute ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

Open emitter

VALUE

UNIT

V_CBO

Collector-base voltage

1500

V_CEO

V_EBO

I_C

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

800

Open collector

I_CM

Collector current-peak

T_C=25℃

℃

P_C

Collectorl power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

T_stg

JMnic

12 3

中文翻译

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2SC4770-2	ISC	获取价格	Transistor
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2SC4771KN	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 50MA I(C) \| SOT-23VAR
2SC4771KP	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 50MA I(C) \| SOT-23VAR
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2SC4771KT146/L	ROHM	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4771KT146/LM	ROHM	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili