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2SC4769 PDF预览

2SC4769

更新时间: 2024-11-17 05:56:15
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
4页 175K
描述
Silicon NPN Power Transistors

2SC4769 技术参数

生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.81
最大集电极电流 (IC):7 A集电极-发射极最大电压:800 V
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):3
最大降落时间(tf):200 nsJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:3 W
最大功率耗散 (Abs):60 W表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICON最大关闭时间(toff):3200 ns
VCEsat-Max:5 V

2SC4769 数据手册

 浏览型号2SC4769的Datasheet PDF文件第2页浏览型号2SC4769的Datasheet PDF文件第3页浏览型号2SC4769的Datasheet PDF文件第4页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC4769  
DESCRIPTION  
·
·With TO-3PML package  
·High breakdown voltage, high reliability.  
·High speed  
·Built-in damper diode  
APPLICATIONS  
·Ultrahigh-definition color display  
·Horizontal deflection output applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-3PML) and symbol  
3
Absolute maximum ratings(Tc=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
1500  
V
V
V
A
A
Open base  
800  
Open collector  
6
7
16  
ICM  
Collector current-peak  
TC=25  
60  
PC  
Collector power dissipation  
W
3
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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