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2SC4691JQ PDF预览

2SC4691JQ

更新时间: 2024-10-26 12:58:47
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 45K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN

2SC4691JQ 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SC-89包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):60
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):450 MHz
Base Number Matches:1

2SC4691JQ 数据手册

 浏览型号2SC4691JQ的Datasheet PDF文件第2页 
Transistor  
2SC4691  
Silicon NPN epitaxial planer type  
For high speed switching  
Unit: mm  
1.6±0.15  
0.8±0.1  
0.4  
0.4  
Features  
High-speed switching.  
Low collector to emitter saturation voltage VCE(sat)  
1
.
SS-Mini type package, allowing downsizing of the equipment  
and automatic insertion through the tape packing.  
3
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCES  
VEBO  
ICP  
Ratings  
Unit  
V
0.2±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
40  
40  
V
5
V
300  
mA  
mA  
mW  
˚C  
1:Base  
2:Emitter  
3:Collector  
EIAJ:SC–75  
SS–Mini Type Package  
IC  
100  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
125  
Marking symbol : 2Y  
Tj  
125  
Tstg  
–55 ~ +125  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
0.1  
Unit  
µA  
Collector cutoff current  
Emitter cutoff current  
VCB = 15V, IE = 0  
IEBO  
VEB = 4V, IC = 0  
0.1  
µA  
*
Forward current transfer ratio  
hFE  
VCE = 1V, IC = 10mA  
60  
200  
0.25  
1.0  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 10mA, IB = 1mA  
0.17  
V
V
IC = 10mA, IB = 1mA  
Transition frequency  
Collector output capacitance  
Turn-on time  
fT  
VCB = 10V, IE = –10mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
450  
2
MHz  
pF  
ns  
Cob  
ton  
toff  
tstg  
6
17  
17  
10  
Turn-off time  
Refer to the measurment circuit  
ns  
Storage time  
ns  
*hFE Rank classification  
Rank  
hFE  
Q
R
60 ~ 120  
2YQ  
90 ~ 200  
2YR  
Marking Symbol  
1

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