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2SC4696 PDF预览

2SC4696

更新时间： 2024-10-26 20:18:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
3页 29K
描述
TRANSISTOR,BJT,DARLINGTON,NPN,80V V(BR)CEO,800MA I(C),SIP

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2SC4696 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：compliant风险等级：5.61
Is Samacsys：N最大集电极电流 (IC)：0.8 A
配置：DARLINGTON最小直流电流增益 (hFE)：1000
最高工作温度：150 °C极性/信道类型：NPN
最大功率耗散 (Abs)：1 W子类别：Other Transistors
表面贴装：NOBase Number Matches：1

2SC4696 数据手册

 浏览型号2SC4696的Datasheet PDF文件第2页浏览型号2SC4696的Datasheet PDF文件第3页 
Ordering number:ENN3580A  
NPN Epitaxial Planar Silicon Darlington Transistor  
2SC4696  
Driver Applications  
Applications  
Package Dimensions  
unit:mm  
· Motor drivers, printer hammer drivers.  
2064A  
Features  
[2SC4696]  
2.5  
· Darlington connection.  
1.45  
1.0  
6.9  
· On-chip Zener diode of 90±10V between collector  
and base.  
· High DC current gain.  
· High inductive load handling capability.  
0.6  
0.9  
0.5  
1
2
3
0.45  
1 : Emitter  
2 : Collector  
3 : Base  
SANYO : NMP  
2.54  
2.54  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
80  
With a low-voltage diode (90±10V)  
With a low-voltage diode (90±10V)  
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
80  
V
CEO  
V
6
V
EBO  
I
0.8  
A
C
Collector Current (Pulse)  
Base Current  
I
1.5  
0.1  
A
CP  
I
A
B
Collector Dissipation  
Junction Temperature  
Storage Temperature  
P
1.0  
W
˚C  
˚C  
C
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
10  
Collector Cutoff Current  
I
V
=60V, I =0  
E
µA  
CBO  
CB  
EB  
CE  
Emitter Cutoff Current  
I
V
V
I
=5V, I =0  
2
20000  
1.5  
mA  
EBO  
C
h
=3V, I =500mA  
C
=500mA, I =1mA  
B
DC Current Gain  
1000  
FE  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Inductive Load Handling Capability  
V
V
0.95  
1.5  
V
V
CE(sat)  
BE(sat)  
C
I
I
I
=500mA, I =1mA  
B
=100µA, I =0  
E
2.0  
C
C
C
V
V
80  
80  
25  
100  
V
(BR)CBO  
=1mA, R =∞  
100  
V
(BR)CEO  
Es/b  
BE  
L=30mH, R =100Ω  
BE  
mJ  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
33005TN (PC)/12099HA (KT)/21297TS (KOTO)/6040TA (CQ) No.3580–1/3  
123

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