Datasheet > 2SC4695

2SC4695

更新时间： 2024-10-26 06:23:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
2页	42K
描述
NPN Epitaxial Planar Silicon Transistor

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中文翻译

获取价格

数据手册

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2SC4695 数据手册

SMD Type

TransistIoCrs

NPN Epitaxial Planar Silicon Transistor

2SC4695

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Adoption of FBET process.

High DC current gain.

High VEBO (VEBO 25V).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

High reverse hFE (150 typ).

Small ON resistance [Ron=1W (IB=5mA)].

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

500

Collector current (pulse)

Base current

I^CP

800

I^B

100

Collector dissipation

Junction temperature

Storage temperature

P^C

250

T^j

150

Tstg

-55 to +150

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