Datasheet > 2SC4695

2SC4695

更新时间： 2024-10-26 20:22:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	34K
描述
TRANSISTOR,BJT,NPN,20V V(BR)CEO,500MA I(C),TO-236

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技术参数
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2SC4695 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Is Samacsys：	N	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	300
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.25 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SC4695 数据手册

Ordering number:ENN3486

NPN Epitaxial Planar Silicon Transistor

2SC4695

Low-Frequency General-Purpose Amplifier,

Muting Applications

Features

Package Dimensions

unit:mm

· Adoption of FBET process.

· High DC current gain.

2018B

· High V

≥25V).

EBO

[2SC4695]

· High reverse h (150 typ).

· Small ON resistance [Ron=1Ω (I =5mA)].

· Ultrasmall-sized package permitting applied sets to

be small and slim.

0.4

0.16

0 to 0.1

0.95

1.9

2.9

1 : Base

2 : Emitter

3 : Collector

SANYO : CP

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

500

800

100

250

150

˚C

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Tstg

–55 to +150

˚C

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

0.1

Collector Cutoff Current

=40V, I =0

µA

CBO

Emitter Cutoff Current

DC Current Gain

=20V, I =0

0.1

EBO

=5V, I =10mA

=10V, I =10mA

300

1200

Gain-Bandwidth Product

Output Capacitance

250

3.6

MHz

=10V, f=1MHz

Marking :WT

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

33005TN (PC)/12099HA (KT)/7190MH, TA (KOTO) No.3486–1/4

12 3 4

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与2SC4695相关器件

型号	品牌	获取价格	描述	数据表
2SC4696	SANYO	获取价格	Driver Applications
2SC4696	ONSEMI	获取价格	TRANSISTOR,BJT,DARLINGTON,NPN,80V V(BR)CEO,800MA I(C),SIP
2SC4697	RENESAS	获取价格	TRANSISTOR,BJT,NPN,80V V(BR)CEO,6A I(C),TO-3
2SC4699K	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 200MA I(C) \| SOT-23VAR
2SC4699KM	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 200MA I(C) \| SOT-23VAR
2SC4699KN	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, NPN, Silicon
2SC4699KP	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 200MA I(C) \| SOT-23VAR
2SC4699KT146/M	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, NPN, Silicon
2SC4699KT146/MN	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, NPN, Silicon
2SC4699KT146/N	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, NPN, Silicon

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