Ordering number : EN3399D
2SA1773 / 2SC4616
SANYO Sem iconductors
DATA S HEET
2SA1773 : PNP Epitaxial Planar Silicon Transistor
2SC4616 : NPN Triple Diffused Planar Silicon Transistor
2SA1773 / 2SC4616
High-Voltage Driver Applications
Features
•
Large current capacity (I =2A).
C
• High breakdown voltage (V
≥400V).
CEO
Specifications ( ) : 2SA1773
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
(--)400
(--)400
(--)5
(--)2
(--)4
1
CBO
CEO
EBO
V
V
I
A
C
Collector Current (Pulse)
I
A
CP
W
W
°C
°C
Collector Dissipation
P
C
T
=25°C
C
15
Junction Temperature
Storage Temperature
Tj
150
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=(--)300V, I =0A
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
I
V
V
V
V
V
(--)1.0
(--)1.0
200*
μA
μA
CBO
CB
EB
CE
CE
CB
E
=(--)4V, I =0A
EBO
C
h
=(--)10V, I =(--)100mA
40*
FE
C
Gain-Bandwidth Product
Output Capacitance
f
=(--)10V, I =(--)100mA
C
(40)60
(25)15
MHz
pF
T
Cob
=(--)30V, f=1MHz
Continued on next page.
* : The 2SA1773 / 2SC4616 are classified by 100mA h as follws:
FE
Rank
C
D
E
h
FE
40 to 80
60 to 120
100 to 200
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
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80509CB TK IM TC-00002035 / 93003TN (KT)/83198HA (KT)/30395TS/12894TH AX-8287/D251MH/5300TA (KOTO) X-6470, 6459 No.3399-1/5