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2SC4617EB-P PDF预览

2SC4617EB-P

更新时间: 2024-11-11 19:50:11
品牌 Logo 应用领域
罗姆 - ROHM 放大器光电二极管晶体管
页数 文件大小 规格书
4页 158K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3F, 3 PIN

2SC4617EB-P 技术参数

生命周期:Active零件包装代码:SC-89
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.59最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):82JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):180 MHz
Base Number Matches:1

2SC4617EB-P 数据手册

 浏览型号2SC4617EB-P的Datasheet PDF文件第2页浏览型号2SC4617EB-P的Datasheet PDF文件第3页浏览型号2SC4617EB-P的Datasheet PDF文件第4页 
General purpose small signal amplifier  
(50V, 0.15A)  
2SC4617EB  
zFeatures  
zDimensions (Unit : mm)  
1) Excellent hFE linearity.  
2) Complements the 2SA1774EB.  
EMT3F  
1.6  
0.7  
0.26  
(3)  
zStructure  
NPN silicon epitaxial  
planar transistor  
(1)  
(2)  
0.13  
0.5 0.5  
1.0  
Each lead has same dimensions  
(1) Base  
(2) Emitter  
(3) Collector  
∗ = Denotes hFE  
Abbreviated symbol : B  
zAbsolute maximum (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
60  
V
V
V
50  
7
I
C
150  
Collector current  
mA  
1  
2  
I
CP  
200  
Power dissipation  
P
D
150  
mW  
°C  
Junction temperature  
Range of storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
1 Pw=1ms Single pulse  
2 Each terminal mounted on a recommended land  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
Conditions  
BVCEO  
BVCBO  
BVEBO  
50  
60  
7
V
V
I
I
I
C
=1mA  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
C=50µA  
V
E=50µA  
I
CBO  
EBO  
CE(sat)  
FE  
100  
100  
400  
560  
nA  
nA  
mV  
V
CB=60V  
V
EB=7V  
I
Emitter cutoff current  
V
I
C/I  
B
=50mA/5mA  
Collector-emitter saturation voltage  
DC current gain  
h
82  
V
V
V
CE=6V, I  
C
=1mA  
f
T
180  
2
MHz  
pF  
CE=12V, I  
CE=12V, I  
E=2mA, f=100MHz  
Transition frequency  
Cob  
3.5  
E=0A, f=1MHz  
Output capacitance  
www.rohm.com  
2009.03 - Rev.B  
1/3  
c
2009 ROHM Co., Ltd. All rights reserved.  

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