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2SC4617G PDF预览

2SC4617G

更新时间： 2024-09-27 11:11:35
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管晶体管
页数 文件大小 规格书
5页 121K
描述
NPN 双极晶体管

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中文翻译

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2SC4617G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：SC-75包装说明：LEAD FREE, CASE 463-01, SC-75, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.41最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE
最小直流电流增益 (hFE)：120JESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：0.125 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：180 MHzBase Number Matches：1

2SC4617G 数据手册

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2SC4617G, S2SC4617G  
NPN Silicon General  
Purpose Amplifier  
Transistor  
This NPN transistor is designed for general purpose amplifier  
applications. This device is housed in the SC−75/SOT-416 package  
which is designed for low power surface mount applications, where  
board space is at a premium.  
http://onsemi.com  
NPN GENERAL PURPOSE  
AMPLIFIER TRANSISTORS  
SURFACE MOUNT  
Features  
• Reduces Board Space  
• High h , 210−460 (typical)  
FE  
• Low V , < 0.5 V  
CE(sat)  
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
SC−75  
CASE 463−01  
STYLE 1  
• S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
COLLECTOR  
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant*  
MAXIMUM RATINGS (T = 25°C)  
J
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
Value  
50  
Unit  
Vdc  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
1
BASE  
2
EMITTER  
V
V
50  
Vdc  
5.0  
Vdc  
MARKING DIAGRAM  
Collector Current − Continuous  
I
C
100  
mAdc  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
B9 M G  
G
THERMAL CHARACTERISTICS  
1
Characteristic  
Power Dissipation (Note 1)  
Junction Temperature  
Symbol  
Max  
125  
Unit  
mW  
°C  
B9 = Device Code  
P
D
M
= Date Code*  
G
= Pb−Free Package  
T
J
150  
(Note: Microdot may be in either location)  
Storage Temperature Range  
T
stg  
−55 ~ +150  
°C  
*Date Code orientation may vary depending  
upon manufacturing location.  
1. Device mounted on a FR-4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
2SC4617G  
SC−75  
3,000/Tape & Reel  
(Pb−Free)  
S2SC4617G  
2SC4617T1G  
SC−75  
(Pb−Free)  
3,000/Tape & Reel  
3,000/Tape & Reel  
SC−75  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
July, 2014 − Rev. 6  
2SC4617/D  
 
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中文翻译

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2SC4617G 替代型号

型号 品牌 替代类型 描述 数据表
S2SC4617G ONSEMI

完全替代

 NPN 双极晶体管
2SC4617 ONSEMI

类似代替

 General Purpose Amplifier Transistors(NPN Silicon)
BC847BTT1G ONSEMI

功能相似

 General Purpose Transistors NPN Silicon

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2SC4617G-AL3-R UTC

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 		Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
2SC4617G-AN3-R UTC

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 		Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
2SC4617G-Q-AB3-R UTC

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 		Small Signal Bipolar Transistor
2SC4617G-Q-AN3-R UTC

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 		Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGE
2SC4617G-Q-AQ3-R UTC

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 		Small Signal Bipolar Transistor
2SC4617G-R-AB3-R UTC

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 		Small Signal Bipolar Transistor
2SC4617G-R-AN3-R UTC

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 		Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGE
2SC4617G-R-AQ3-R UTC

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 		Small Signal Bipolar Transistor
2SC4617G-S-AE3-R UTC

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 		Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGE
2SC4617G-S-AL3-R UTC

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 		Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGE

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