Datasheet > 2SC4617N3

2SC4617N3

更新时间： 2024-10-15 17:15:35

品牌	Logo	应用领域
德昌 - TC		/
页数	文件大小	规格书
3页	161K
描述
SOT-883

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中文翻译

获取价格

数据手册

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2SC4617N3 数据手册

TAK CHEON

^®

SEMICONDUCTOR

150mW SOT-883 SURFACE MOUNT

Plastic Package

NPN Silicon General Purpose Transistor

Green Product

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

P_C

T_STG

T_J

Collector Power Dissipation

Storage Temperature Range

Operating Junction Temperature

Collector-Base Voltage

150

°C

-55 to +150

+150

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

SOT-883 (DFN1006-3)

Collector Current - Continuous

100

These ratings are limiting values above which the serviceability of the diode may be impaired.

pecification Features:

Electrical Symbol:

Device Marking Code:

3 COLLECTOR

Device Type

Marking

Shipping

Low Cob = 2.0pF (Typical)

Low Vce(sat) < 0.4V

RoHS Compliant

2SC4617QN3

10,000/Reel

Green EMC

Matte Tin(Sn) Lead Finish

Weight: approx. 0.001g

2SC4617RN3

2SC4617SN3

10,000/Reel

1 BASE

2 EMITTER

Electrical Characteristics

Symbol

T_A= 25°C unless otherwise noted

Limits

Parameter

Test Condition

Unit

Min

Typ

Max

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I_C=50uA, I_E=0A

I_C=1mA, I_B=0A

I_E=50uA, I_C=0A

V_CB=50V, I_E=0A

V_EB=5V, I_C=0A

V_CE=6V, I_C=1mA

I_C=50mA, I_B=5mA

Volts

µA

0.1

560

0.4

I_EBO

Emitter Cut-off Current

µA

h_FE

DC Current Gain

120

---

V_CE(sat)

f_T

Collector-Emitter Saturation Voltage

Transition Frequency

Volts

MHz

V_CE=5V, I_C=10mA

f=30MHz

280

2.0

C_OB

Collector Output Capacitance

V_CB=12V, I_E=0A,

f=1MHz

DB Number: DB-327

Sep 2020, Revision A

Page 1

12 3

中文翻译

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