Datasheet > 2SC4617EB_09

2SC4617EB_09

更新时间： 2024-09-26 05:56:15

品牌	Logo	应用领域
罗姆 - ROHM		放大器
页数	文件大小	规格书
4页	165K
描述
General purpose small signal amplifier (50V, 0.15A)

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中文翻译

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数据手册

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2SC4617EB_09 数据手册

General purpose small signal amplifier (50V, 0.15A)

2SC4617EB

Features

Dimensions (Unit : mm)

1) Excellent h^FElinearity.

2) Complements the 2SA1774EB.

EMT3F

1.6

0.7

Structure

0.26

NPN silicon epitaxial

planar transistor

(3)

(1)

(2)

0.13

0.5 0.5

1.0

Each lead has same dimensions

(1) Base

(2) Emitter

(3) Collector

∗ = Denotes hFE

Abbreviated symbol : B

Absolute maximum (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

150

Collector current

∗1

∗2

200

Power dissipation

150

°C

Junction temperature

Range of storage temperature

150

Tstg

−55 to +150

°C

∗1 Pw=1ms Single pulse

∗2 Each terminal mounted on a recommended land

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

BV^CEO

BVCBO

BVEBO

=1mA

=50μA

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

E=50μA

CBO

EBO

CE(sat)

−

100

400

390

−

CB=60V

EB=7V

−

Emitter cutoff current

−

=50mA/5mA

Collector-emitter saturation voltage

DC current gain

120

−

CE=6V, I

=1mA

180

MHz

CE=12V, I

E=−2mA, f=100MHz

Transition frequency

Cob

−

3.5

E=0A, f=1MHz

Output capacitance

h^FErank categories

Rank

120 to 270 180 to 390

www.rohm.com

2009.12 - Rev.C

1/3

12 3 4

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2SC4617EBQ	ROHM	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, EMT3F,
2SC4617EB-Q	UTC	获取价格	暂无描述
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