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2SC4617 PDF预览

2SC4617

更新时间: 2024-11-12 14:48:59
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 605K
描述
SOT-523

2SC4617 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-523 Plastic-Encapsulate Transistors  
SOT-523  
2SC4617 TRANSISTOR (NPN)  
FEATURES  
z
Low Cob:Cob=2.0pF(Typ)  
Complement to 2SA1774  
1. BASE  
z
2. EMTTER  
3. COLLECTOR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
Parameter  
Value  
60  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
V
7
V
Collector Current -Continuous  
150  
150  
-55-150  
mA  
mW  
PC  
Collector Power Dissipation  
Operation Junction and Storage Temperature Range  
TJ,Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
Min  
60  
50  
7
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=50uA, IE=0  
V(BR)CEO IC=1mA, IB=0  
V(BR)EBO IE=50uA, IC=0  
V
V
ICBO  
IEBO  
hFE  
VCB=60V, IE=0  
0.1  
0.1  
560  
0.4  
μA  
μA  
Emitter cut-off current  
VEB=7V, IC=0  
DC current gain  
VCE=6V, IC=1mA  
120  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
IC=50mA, IB=5mA  
VCE=12V, IC=2mA, f=100MHz  
VCB=12V, IE=0, f=1MHz  
V
180  
MHz  
pF  
Collector output capacitance  
Cob  
3.5  
CLASSIFICATION OF hFE  
S
Rank  
Q
120-270  
BQ  
R
180-390  
BR  
270-560  
BS  
Range  
Marking  
www.jscj-elec.com  
1
Rev. - 2.0  

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