Datasheet > 2SC4604_04

2SC4604_04

更新时间： 2024-09-21 07:31:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关放大器电源开关功率放大器
页数	文件大小	规格书
4页	118K
描述
Power Amplifier Application Power Switching Applications.

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2SC4604_04 数据手册

2SC4604

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC4604

Power Amplifier Application.

Power Switching Applications.

Unit: mm

•

Low collector-emitter saturation voltage: V

= 0.5 V (max)

(I = 1.5 A)

CE (sat)

•

High-speed switching: t

= 0.5 µs (typ.)

stg

Complementary to 2SA1761

Maximum Ratings

(Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

Base current

0.6

JEDEC

JEITA

TO-92MOD

Collector power dissipation

Junction temperature

900

°C

150

―

Storage temperature range

stg

−55 to 150

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 80 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

―

0.1

―

µA

CBO

Emitter cut-off current

= 6 V, I = 0

EBO

Collector-emitter breakdown voltage

= 10 mA, I = 0

120

―

(BR) CEO

= 2 V, I = 100 mA

―

400

―

FE (1)

DC current gain

= 2 V, I = 2 A

―

FE (2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

= 1.5 A, I = 75 mA

―

0.5

1.2

―

CE (sat)

BE (sat)

= 1.5 A, I = 75 mA

―

= 2 V, I = 100 mA

―

100

MHz

Collector output capacitance

= 10 V, I = 0, f = 1 MHz

―

Turn-on time

―

0.1

0.5

0.1

―

Output

30 V

20 µs

Input

Switching time

µs

Storage time

Fall time

stg

= −I = 75 mA, duty cycle ≤ 1%

2004-07-26

12 3 4

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