Datasheet > 2SC4568-EB

2SC4568-EB

更新时间： 2024-11-25 15:26:23

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
6页	107K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SC-59, 3 PIN

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中文翻译

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技术参数
数据手册

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2SC4568-EB 技术参数

生命周期：	Obsolete	包装说明：	SC-59, 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.03 A	基于收集器的最大容量：	0.9 pF
集电极-发射极最大电压：	12 V	配置：	SINGLE
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	5500 MHz	Base Number Matches：	1

2SC4568-EB 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4568

NPN SILICON EPITAXIAL TRANSISTOR

UHF TV TUNER OSC/MIXER

PACKAGE DIMENSIONS

DESCRIPTION

(Units: mm)

The 2SC4568 is an NPN silicon epitaxial transistor intended for use as

UHF oscillator and UHF mixer in a tuner of TV rceiver.

2.8±0.2

1.5

+0.1

−0.15

0.65

FEATURES

•

High gain bandwidth product

f^T= 5.5 GHz TYP.

Low output capacitance

C^ob= 0.7 pF TYP.

Surface mount package

EIAJ: SC-59

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

Marking

Maximum Voltages and Current

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V^CBO

V^CEO

V^EBO

I^C

P^T

T^j

3.0

150

125

°C

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

T^stg

−55 to +125 °C

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

Collector Saturation Voltage

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

0.1

UNIT

µA

TEST CONDITIONS

I^CBO

V^CB= 15 V, I^E= 0

I^EBO

0.1

µA

V^EB= 1 V, I^C= 0

V^CE(sat)

h^FE

0.5

h^FE= 10, I^C= 5 mA

100

5.5

0.7

200

V^CE= 5 V, I^C= 5 mA *1

V^CE= 5 V, I^C= 5 mA, f = 1.0 GHz

V^CB= 5 V, I^E= 0, f = 1.0 MHz

V^CE= 5 V, I^C= 5 mA, f = 1.0 MHz

Gain Bandwidth Product

Output Capacitance

f^T

GHz

C^ob

S^21e²

0.9

Insertion Gain

5.0

*1 Pulsed: PW = 35 µS, Duty Cycle ≤ 2 %

h^FEClassification

Class

Marking

h^FE

T72/EB *

T73/FB *

T73

T74/GB *

T74

T72

40 to 80

60 to 120

100 to 200

* Old Specification / New Specification

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10035EJ01V0DS (1st edition)

(Previous No. P10373EJ2V1DS00)

Date Published October 2001 CP(K)

Printed in Japan

The mark shows major revised points.



NEC Corporation 1989

NEC Compound Semiconductor Devices 2001



12 3 4 5 6

中文翻译

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与2SC4568-EB相关器件

型号	品牌	获取价格	描述	数据表
2SC4568-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4568-GB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4568T72	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 30MA I(C) \| SOT-346
2SC4568-T72	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4568T73	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 30MA I(C) \| SOT-346
2SC4568-T73	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4568T74	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 30MA I(C) \| SOT-346
2SC4568-T74	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4569	NEC	获取价格	UHF TV TUNER OSC/MIXER NPN SILICON EPITAXIAL TRANSISTOR
2SC4569	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN

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