Datasheet > 2SC4569T76

2SC4569T76

更新时间： 2024-01-05 23:15:27

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
8页	53K
描述
TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 60MA I(C) \| TO-236

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中文翻译

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数据手册

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2SC4569T76 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4569

UHF TV TUNER OSC/MIXER

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC4569 is an NPN silicon epitaxial transistro intended for use as

UHF oscillator and UHF mixer in a tuner of TV receiver.

(Units: mm)

2.8±0.2

1.5

+0.1

−0.15

0.65

FEATURES

•

High gain bandwidty product

f^T= 5.0 GHz TYP.

Low output capacitance

C^ob= 0.9 pF TYP.

Surface mount package

EIAJ: SC-59

Marking

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Maximum Voltages and Current

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

3.0

PIN CONNECTIONS

1. Emitter

2. Base

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

150

3. Collector

T^j

125

T^stg

55 to +125

ELECTRICAL CHARACTERISTICS (T^A= 25 C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

Collector Saturation Voltage

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

V^CB= 15 V, I^E= 0

I^CBO

0.1

0.5

200

I^EBO

V^EB= 1 V, I^C= 0

V^CE(sat)

h^FE

h^EF= 10, I^C= 5 mA

100

5.0

0.9

V^CE= 5 V, I^C= 5 mA *1

Gain Bandwidth Product

Output Capacitance

f^T

GHz

V^CE= 5 V, I^C= 5 mA f = 1.0 GHz

V^CB= 5 V, I^E= 0, f = 1.0 MHz

V^CE= 5 V, I^C= 5 mA, f = 1.0 MHz

C^ob

1.2

Insertion Gain

S^21e

5.0

*1 Pulsd: PW 35 S, Dyty Cycle 2 %

h^FEClassification

Class

Marking

h^FE

T75

T76

T77

40 to 80

60 to 120

100 to 200

Document No. P10374EJ3V1DS00 (3rd edition)

Date Published March 1997 N

Printed in Japan

1989

12 3 4 5 6 7 8

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