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2SC4570-T2T73 PDF预览

2SC4570-T2T73

更新时间: 2024-11-19 14:30:27
品牌 Logo 应用领域
日电电子 - NEC 放大器光电二极管晶体管
页数 文件大小 规格书
8页 54K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SC-70, SUPERMINI-3

2SC4570-T2T73 技术参数

生命周期:Obsolete包装说明:PLASTIC, SC-70, SUPERMINI-3
Reach Compliance Code:unknown风险等级:5.62
其他特性:LOW NOISE最大集电极电流 (IC):0.03 A
基于收集器的最大容量:0.9 pF集电极-发射极最大电压:12 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):5500 MHz
Base Number Matches:1

2SC4570-T2T73 数据手册

 浏览型号2SC4570-T2T73的Datasheet PDF文件第2页浏览型号2SC4570-T2T73的Datasheet PDF文件第3页浏览型号2SC4570-T2T73的Datasheet PDF文件第4页浏览型号2SC4570-T2T73的Datasheet PDF文件第5页浏览型号2SC4570-T2T73的Datasheet PDF文件第6页浏览型号2SC4570-T2T73的Datasheet PDF文件第7页 
DATA SHEET  
SILICON TRANSISTOR  
2SC4570  
NPN SILICON EPITAXIAL TRANSISTOR  
SUPER MINI MOLD  
DESCRIPTION  
The 2SC4570 is a low supply voltage transistor designed for UHF  
OSC/MIX.  
PACKAGE DIMENSIONS  
(Units: mm)  
2.1±0.1  
1.25±0.1  
It is suitable for a high density surface mount assembly since the  
transistor has been applied super mini mold package.  
FEATURES  
2
1
High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)  
Low Cob : 0.7 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz)  
Super Mini Mold Package. (EIAJ : SC-70)  
3
ORDERING INFORMATION  
Marking  
PART  
QUANTITY  
NUMBER  
PACKING STYLE  
2SC4570-T1 3 kpcs./Reel Embossed tape 8 mm wide. Pin 3 (Collector) face  
to perforation side of the tape.  
2SC4570-T2 3 kpcs./Reel Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2  
(Base) face to perforation side of the tape.  
PIN CONNECTIONS  
1. Emitter  
2. Base  
* Please contact with responsible NEC person, if you require evaluation  
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4570)  
3. Collector  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
20  
V
V
12  
3
30  
V
mA  
mW  
C
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
120  
Tj  
125  
Tstg  
55 to +125  
C
Document No. P10408EJ2V0DS00 (2nd edition)  
(Previous No. TC-2434)  
Date Published March 1997 N  
Printed in Japan  
©
1993  

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