5秒后页面跳转
2SC4571 PDF预览

2SC4571

更新时间: 2024-11-22 22:40:03
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
8页 69K
描述
NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

2SC4571 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SUPER MINIMOLD PACKAGE-3Reach Compliance Code:compliant
风险等级:5.66Is Samacsys:N
最大集电极电流 (IC):0.06 A基于收集器的最大容量:1.2 pF
集电极-发射极最大电压:12 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):5000 MHzBase Number Matches:1

2SC4571 数据手册

 浏览型号2SC4571的Datasheet PDF文件第2页浏览型号2SC4571的Datasheet PDF文件第3页浏览型号2SC4571的Datasheet PDF文件第4页浏览型号2SC4571的Datasheet PDF文件第5页浏览型号2SC4571的Datasheet PDF文件第6页浏览型号2SC4571的Datasheet PDF文件第7页 
DATA SHEET  
SILICON TRANSISTOR  
2SC4571  
NPN SILICON EPITAXIAL TRANSISTOR  
SUPER MINI MOLD  
DESCRIPTION  
The 2SC4571 is a low supply voltage transistor designed for UHF  
OSC/MIX.  
PACKAGE DIMENSIONS  
(Units: mm)  
2.1±0.1  
1.25±0.1  
It is suitable for a high density surface mount assembly since the  
transistor has been applied super mini mold package.  
FEATURES  
2
1
High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)  
Low Cob : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz)  
Super Mini Mold Package. (EIAJ : SC-70)  
3
ORDERING INFORMATION  
Marking  
PART  
QUANTITY  
NUMBER  
PACKING STYLE  
2SC4571-T1 3 kpcs./Reel Embossed tape 8 mm wide. Pin 3 (Collector) face  
to perforation side of the tape.  
2SC4571-T2 3 kpcs./Reel Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2  
(Base) face to perforation side of the tape.  
PIN CONNECTIONS  
1. Emitter  
2. Base  
* Please contact with responsible NEC person, if you require evaluation  
sample. Unit sample lot. quantity shall be 50 pcs. (Part No.: 2SC4571)  
3. Collector  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
20  
V
V
12  
3
60  
V
mA  
mW  
C
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
120  
Tj  
125  
Tstg  
55 to +125  
C
Document No. P10409EJ2V0DS00 (2nd edition)  
(Previous No. TC-2435)  
Date Published March 1997 N  
Printed in Japan  
©
1993  

与2SC4571相关器件

型号 品牌 获取价格 描述 数据表
2SC4571(NE58230) ETC

获取价格

Discrete
2SC4571-A NEC

获取价格

RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4571-T1 NEC

获取价格

NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
2SC4571-T1 RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3
2SC4571-T1-A NEC

获取价格

RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4571-T1T75 NEC

获取价格

暂无描述
2SC4571-T1T75 RENESAS

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3
2SC4571-T1-T75 RENESAS

获取价格

RF SMALL SIGNAL TRANSISTOR
2SC4571-T1T75-A NEC

获取价格

RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4571-T1T76 NEC

获取价格

RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Sili