生命周期: | Obsolete | 包装说明: | SUPER MINIMOLD PACKAGE-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.6 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.06 A | 基于收集器的最大容量: | 1.2 pF |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.12 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 5000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4571-T75 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC4571-T75-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC4571T75-T1 | NEC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-323 | |
2SC4571T75-T2 | NEC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-323 | |
2SC4571T76 | NEC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-323 | |
2SC4571T76 | RENESAS |
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UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3 | |
2SC4571-T76 | NEC |
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RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC4571-T76-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC4571T76-A | RENESAS |
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TRANSISTOR,BJT,NPN,12V V(BR)CEO,60MA I(C),SOT-323 | |
2SC4571T76-T1 | NEC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-323 |