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2SC4571-T1-A PDF预览

2SC4571-T1-A

更新时间: 2024-11-11 13:04:19
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
8页 69K
描述
RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SUPER MINIMOLD PACKAGE-3

2SC4571-T1-A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.6最大集电极电流 (IC):0.06 A
基于收集器的最大容量:1.2 pF集电极-发射极最大电压:12 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):5000 MHz
Base Number Matches:1

2SC4571-T1-A 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC4571  
NPN SILICON EPITAXIAL TRANSISTOR  
SUPER MINI MOLD  
DESCRIPTION  
The 2SC4571 is a low supply voltage transistor designed for UHF  
OSC/MIX.  
PACKAGE DIMENSIONS  
(Units: mm)  
2.1±0.1  
1.25±0.1  
It is suitable for a high density surface mount assembly since the  
transistor has been applied super mini mold package.  
FEATURES  
2
1
High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)  
Low Cob : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz)  
Super Mini Mold Package. (EIAJ : SC-70)  
3
ORDERING INFORMATION  
Marking  
PART  
QUANTITY  
NUMBER  
PACKING STYLE  
2SC4571-T1 3 kpcs./Reel Embossed tape 8 mm wide. Pin 3 (Collector) face  
to perforation side of the tape.  
2SC4571-T2 3 kpcs./Reel Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2  
(Base) face to perforation side of the tape.  
PIN CONNECTIONS  
1. Emitter  
2. Base  
* Please contact with responsible NEC person, if you require evaluation  
sample. Unit sample lot. quantity shall be 50 pcs. (Part No.: 2SC4571)  
3. Collector  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
20  
V
V
12  
3
60  
V
mA  
mW  
C
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
120  
Tj  
125  
Tstg  
55 to +125  
C
Document No. P10409EJ2V0DS00 (2nd edition)  
(Previous No. TC-2435)  
Date Published March 1997 N  
Printed in Japan  
©
1993  

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