Datasheet > 2SC4570T73-T2

2SC4570T73-T2

更新时间： 2024-11-18 23:20:19

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
8页	68K
描述
TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 30MA I(C) \| SOT-323

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数据手册

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2SC4570T73-T2 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4570

NPN SILICON EPITAXIAL TRANSISTOR

SUPER MINI MOLD

DESCRIPTION

The 2SC4570 is a low supply voltage transistor designed for UHF

OSC/MIX.

PACKAGE DIMENSIONS

(Units: mm)

2.1±0.1

1.25±0.1

It is suitable for a high density surface mount assembly since the

transistor has been applied super mini mold package.

FEATURES

•

High f^T: 5.5 GHz TYP. (@ V^CE= 5 V, I^C= 5 mA, f = 1 GHz)

Low C^ob: 0.7 pF TYP. (@ V^CB= 5 V, I^E= 0, f = 1 MHz)

Super Mini Mold Package. (EIAJ : SC-70)

ORDERING INFORMATION

Marking

PART

QUANTITY

NUMBER

PACKING STYLE

2SC4570-T1 3 kpcs./Reel Embossed tape 8 mm wide. Pin 3 (Collector) face

to perforation side of the tape.

2SC4570-T2 3 kpcs./Reel Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2

(Base) face to perforation side of the tape.

PIN CONNECTIONS

1. Emitter

2. Base

* Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4570)

3. Collector

ABSOLUTE MAXIMUM RATINGS (T^A= 25 C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

120

T^j

125

T^stg

55 to +125

Document No. P10408EJ2V0DS00 (2nd edition)

(Previous No. TC-2434)

Date Published March 1997 N

Printed in Japan

1993

12 3 4 5 6 7 8

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2SC4570-T74	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3
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2SC4571	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
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2SC4571-T1	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3