Datasheet > 2SC4570-T1T74

2SC4570-T1T74

更新时间： 2024-01-14 09:08:58

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
7页	42K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SUPER MINIMOLD PACKAGE-3

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2SC4570-T1T74 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.62	最大集电极电流 (IC)：	0.03 A
基于收集器的最大容量：	0.9 pF	集电极-发射极最大电压：	12 V
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e6
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	5500 MHz
Base Number Matches：	1

2SC4570-T1T74 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC4570

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR UHF TUNER OSC/MIX

3-PIN SUPER MINIMOLD

DESCRIPTION

The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX.

It is suitable for a high density surface mount assembly since the transistor has been applied super minimold

package.

FEATURES

•

High Gain Bandwidth Product

f^T= 5.5 GHz TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz

Low Output Capacitance

C^ob= 0.7 pF TYP. @ VCB = 5 V, IE = 0 mA, f = 1 MHz

3-pin super minimold Package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC4570

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (collector) face to perforation side of the tape

2SC4570-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

120

125

Tstg

−55 to +125

Note Free air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10514EJ01V0DS (1st edition)

(Previous No. P10408EJ2V0DS00)

Date Published October 2004 CP(K)

The mark shows major revised points.

NEC Compound Semiconductor Devices, Ltd. 1993, 2004

Printed in Japan

12 3 4 5 6 7

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与2SC4570-T1T74相关器件

型号	品牌	获取价格	描述	数据表
2SC4570-T1T74-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4570-T2	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
2SC4570-T2T72	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4570-T2T73	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4570-T2T74	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4570-T72	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4570-T72-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4570T72-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,30MA I(C),SOT-323
2SC4570T72-T1	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 30MA I(C) \| SOT-323
2SC4570T72-T1	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,30MA I(C),SOT-323

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