Datasheet > 2SC4570

2SC4570

更新时间： 2024-11-19 12:55:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
9页	280K
描述
isc Silicon NPN RF Transistor

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2SC4570 数据手册

INCHANGE Semiconductor

iscRF Product Specification

isc Silicon NPN RF Transistor

2SC4570

DESCRIPTION

·High Current-Gain—Bandwidth Product

f_T= 5.5 GHz TYP. @V_CE= 5 V, I_C= 5 mA, f = 1.0 GHz

·Low C_OB

0.7pF TYP. @V_CB= 5 V, I_E= 0, f = 1.0 MHz

APPLICATIONS

·Designed for use in UHF oscillator and mixer.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

3.0

Collector Current-Continuous

Collector Power Dissipation

@T_C=25℃

P_C

0.12

125

T_J

Junction Temperature

℃

Storage Temperature Range

-55~125

T_stg

isc Website：www.iscsemi.cn

12 3 4 5 6 7...9

中文翻译

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与2SC4570相关器件

型号	品牌	获取价格	描述	数据表
2SC4570(NE58130)	ETC	获取价格	Discrete
2SC4570-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4570-T1	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
2SC4570-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4570-T1T72	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4570-T1-T72	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3
2SC4570-T1T72-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4570-T1T73	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4570-T1T73-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4570-T1T74	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili