Datasheet > 2SC4097

2SC4097

更新时间： 2025-09-22 18:53:15

品牌	Logo	应用领域
南晶电子 - DGNJDZ		/
页数	文件大小	规格书
4页	2299K
描述
Pcm(mW) : 200; Ic(mA) : 500; BVCBO(V) : 40; BVCEO(V) : 32; BVEBO(V) : 5; Min : 82; Max : 390; VCE (sat) (v) : 0.4; Package Outline : SOT-323;

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2SC4097 数据手册

DONGGUAN NANJING ELECTRONICS LTD.,

SOT-323 Plastic-Encapsulate Transistors

SOT-323

2SC4097 TRANSISTOR (NPN)

FEATURES

High I_CMax. =0.5A

Low V_CE(sat).Optimal for low voltage operation.

Complements the 2SA1577

1. BASE

2. EMITTER

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

3. COLLECTOR

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

200

625

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=100μA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=20V,I_E=0

μA

Emitter cut-off current

V_EB=4V,I_C=0

DC current gain

V_CE=3V,I_C=10mA

390

0.4

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=500mA, I_B=50mA

V_CE=5V, I_C=20mA,f =100MHz

V_CB=10V,I_E=0,f=1MHZ

250

MHz

Collector Output Capacitance

Cob

CLASSIFICATION OF h_FE

Rank

Range

82-180

120-270

180-390

MARKING

1/4

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

12 3 4

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