Datasheet > 2SC4093-T1-R26-A

2SC4093-T1-R26-A

更新时间： 2024-11-05 21:22:35

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器 ISM频段光电二极管晶体管
页数	文件大小	规格书
7页	41K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-4

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2SC4093-T1-R26-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC4093

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

4-PIN MINIMOLD

DESCRIPTION

The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which

enables high-isolation gain.

FEATURES

•

Low Noise

NF = 1.1 dB TYP. @ V^CE= 10 V, IC = 7 mA, f = 1 GHz

High Power gain

•

21e ²= 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

•

Maximum available power gain: MAG = 14.2 dB TYP. @ V^CE= 10 V, IC = 20 mA, f = 1 GHz

4-pin minimold Package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC4093

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape

2SC4093-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

3.0

100

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

200

150

Tstg

−65 to +150

Note Free air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10519EJ01V0DS (1st edition)

(Previous No. P10365EJ3V1DS00)

Date Published October 2004 CP(K)

The mark shows major revised points.

NEC Compound Semiconductor Devices, Ltd. 1991, 2004

Printed in Japan

12 3 4 5 6 7

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与2SC4093-T1-R26-A相关器件

型号	品牌	获取价格	描述	数据表
2SC4093-T1R26-A	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4093-T1-R27-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4093-T1-R27-A	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4093-T1R27-A	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4093-T1-R28	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4093-T1-R28-A	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4093-T1R28-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4093-T1R28-A	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4093-T1RBF	NEC	获取价格	暂无描述
2SC4093-T1-RBF-A	NEC	获取价格	暂无描述

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