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2SC4093-T1-R27-A PDF预览

2SC4093-T1-R27-A

更新时间： 2024-11-18 14:32:03
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段光电二极管晶体管
页数 文件大小 规格书
7页 41K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-4

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2SC4093-T1-R27-A 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：MINIMOLD PACKAGE-4Reach Compliance Code：compliant
风险等级：5.58最大集电极电流 (IC)：0.1 A
基于收集器的最大容量：0.95 pF集电极-发射极最大电压：12 V
配置：SINGLE最高频带：ULTRA HIGH FREQUENCY BAND
JESD-30 代码：R-PDSO-G4JESD-609代码：e6
湿度敏感等级：1元件数量：1
端子数量：4封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：TIN BISMUTH端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：10
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：7000 MHzBase Number Matches：1

2SC4093-T1-R27-A 数据手册

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DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC4093  
NPN EPITAXIAL SILICON RF TRANSISTOR  
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION  
4-PIN MINIMOLD  
DESCRIPTION  
The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.  
It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which  
enables high-isolation gain.  
FEATURES  
•
Low Noise  
NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz  
High Power gain  
•
S
21e 2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz  
•
•
Maximum available power gain: MAG = 14.2 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz  
4-pin minimold Package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC4093  
50 pcs (Non reel)  
3 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape  
2SC4093-T1  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
20  
12  
V
3.0  
V
100  
mA  
mW  
°C  
°C  
Note  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Ptot  
200  
Tj  
150  
Tstg  
−65 to +150  
Note Free air  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10519EJ01V0DS (1st edition)  
(Previous No. P10365EJ3V1DS00)  
Date Published October 2004 CP(K)  
The mark  shows major revised points.  
©
NEC Compound Semiconductor Devices, Ltd. 1991, 2004  
Printed in Japan  
1234567

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2SC4093-T1RBF-A RENESAS

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2SC4093-T1RBG NEC

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 		RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4093-T1-RBG RENESAS

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 		RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic

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