生命周期: | Active | 包装说明: | NP, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.34 | 最大集电极电流 (IC): | 0.2 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
认证状态: | COMMERCIAL | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 70 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4003 | TYSEMI |
获取价格 |
High breakdown voltage Adoption of MBIT process Excellent hFE linearity | |
2SC4003 | WINNERJOIN |
获取价格 |
TRANSISTOR (NPN) | |
2SC4003 | TRSYS |
获取价格 |
Plastic-Encapsulated Transistors | |
2SC4003 | SANYO |
获取价格 |
High-Voltage Driver Applications | |
2SC4003 | KEXIN |
获取价格 |
NPN Triple Diffused Planar Silicon Transistor | |
2SC4003 | CJ |
获取价格 |
TO-252-2L | |
2SC4003 | LGE |
获取价格 |
双极型晶体管 | |
2SC4003 | FOSHAN |
获取价格 |
TO-252 | |
2SC4003D | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 200MA I(C) | TO-252 | |
2SC4003D | BL Galaxy Electrical |
获取价格 |
400V,0.2A,General Purpose NPN Bipolar Transistor |