Datasheet > 2SC4003D(TO-252)

2SC4003D(TO-252)

更新时间： 2024-09-23 19:42:31

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江苏长电/长晶 - CJ		/
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Transistor

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2SC4003D(TO-252) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SC4003D(TO-252) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-252 Plastic-Encapsulate Transistors

2SC4003 TRANSISTOR (NPN)

TO-252

FEATURES

High h_FE

1 2 3

h_FE=60 to 200

1. BASE

low V_CE(sat)V_CE(sat)=0.6V

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

400

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.2

P_C

℃

T_J

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

400

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=10µA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=10µA,I_C=0

I_CBO

I_EBO

V_CB=300V,I_E=0

0.1

200

0.6

µA

Emitter cut-off current

V_EB=4V,I_C=0

DC current gain

h_FE

V_CE=10V,I_C=50mA

I_C=50mA,I_B=5mA

V_CE=30V,I_C=10mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

MHz

CLASSIFICATION OF h_FE

Rank

60-120

100-200

Range

A,Jun,2011

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