Datasheet > 2SC4003

2SC4003

更新时间： 2023-12-06 20:10:37

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	731K
描述
双极型晶体管

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数据手册

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2SC4003 数据手册

2SC4003(NPN)

TO-251/TO-252-2L Transistor

TO-251

1. BASE

2. COLLECTOR

3. EMITTER

2 3

Features

ꢀ

High h_FE

h_FE=60 to 200

ꢀ

low V_CE(sat)V_CE(sat)=0.6V

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

TO-252-2L

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

400

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.2

P_C

℃

T_J

150

-55-150

T_stg

Storage Temperature

Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

400

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=10µA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=10µA,I_C=0

I_CBO

I_EBO

V_CB=300V,I_E=0

0.1

200

0.6

µA

Emitter cut-off current

V_EB=4V,I_C=0

DC current gain

h_FE

V_CE=10V,I_C=50mA

I_C=50mA,I_B=5mA

V_CE=30V,I_C=10mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

MHz

CLASSIFICATION OF h_FE

Rank

60-120

100-200

Range

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mail:lge@lgesemi.com

Revision:20170701-P1

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