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2SC4007 PDF预览

2SC4007

更新时间: 2024-11-14 07:30:51
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无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 105K
描述
isc Silicon NPN Power Transistor

2SC4007 数据手册

 浏览型号2SC4007的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC4007  
DESCRIPTION  
·Low Collector Saturation Voltage  
: VCE(sat)= 1.0V(Max)@ IC= 2A  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= 80V (Min)  
·Wide Area of Safe Operation  
·Complement to Type 2SA1634  
APPLICATIONS  
·Designed for audio and general purpose applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
100  
V
V
V
A
A
80  
6
Collector Current-Continuous  
Collector Current-Peak  
4
ICM  
6
40  
Collector Power Dissipation  
@ TC=25℃  
PC  
W
Collector Power Dissipation  
@ Ta=25℃  
2
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Websitewww.iscsemi.cn  

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