Datasheet > 2SC3979/2SC3979A

2SC3979/2SC3979A

更新时间： 2024-11-13 23:20:15

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	73K
描述
2SC3979. 2SC3979A - NPN Transistor

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中文翻译

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数据手册

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2SC3979/2SC3979A 数据手册

Power Transistors

2SC3979, 2SC3979A

Silicon NPN triple diffusion planar type

Unit: mm

10.0 0.ꢀ

5.5 0.ꢀ

4.ꢀ 0.ꢀ

For high breakdown voltage high-speed switching

ꢀ.7 ^0.ꢀ

I Features

φ ꢁ.1 0.1

•

High-speed switching

High collector to base voltage V_CBO

Wide area of safe operation (ASO)

Satisfactory linearity of forward current transfer ratio h_FE

Full-pack package which can be installed to the heat sink with one

screw

1.ꢁ 0.ꢀ

1.4 0.1

+0.ꢀ

–0.1

0.5

0.8 0.1

ꢀ.54 0.ꢁ

5.08 0.5

I Absolute Maximum Ratings T_C= 25°C

1 : Base

2 : Collector

3 : Emitter

Parameter

Symbol

Rating

Unit

ꢀ ꢁ

2SC3979

2SC3979A

2SC3979

2SC3979A

V_CBO

900

Collector to base

EIAJ : SC-67

TO-220F Package

voltage

1 000

V_CES

900

Collector to

emitter voltage

1 000

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

V_CEO

V_EBO

I_CP

800

I_C

Base current

I_B

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

2SC3979

I_CBO

V_CB= 900 V, I_E= 0

µA

Collector cutoff

current

2SC3979A

V_CB= 1 000 V, I_E= 0

V_EB= 7 V, I_C= 0

Emitter cutoff current

I_EBO

V_CEO

h_FE1

h_FE2

V_CE(sat)

V_BE(sat)

f_T

µA

Collector to emitter voltage

Forward current transfer ratio

I_C= 10 mA, I_B= 0

800

V_CE= 5 V, I_C= 0.1 A

V_CE= 5 V, I_C= 0.8 A

I_C= 0.8 A, I_B= 0.16 A

V_CE= 5 V, I_C= 0.15 A, f = 1 MHz

I_C= 0.8 A, I_B1= 0.16 A, I_B2= − 0.32 A,

V_CC= 250 V

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

1.5

MHz

µs

t_on

0.7

2.5

0.3

Storage time

t_stg

µs

Fall time

t_f

µs

12 3 4

中文翻译

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